IPB027N10N3 G Infineon

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Part Number IPB027N10N3 G
Manufacturer Infineon
Quantity in stock 158450 Pieces
Market Price -
Our Better Price Send by email: [email protected]
Delivery Time 1 day (can ship today)
Description Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T R
Category Discrete Semiconductor
Family Transistor
ROHS Compliant Yes
MSL Level IPB027N10N3 G
Datasheet download IPB027N10N3 G.pdf
Request Quotation for IPB027N10N3 G

IPB027N10N3 G Specifications

Part Number IPB027N10N3 G
Channel Mode Enhancement
Maximum Drain Source Voltage 100 V
RDS-on 2.7@10V mOhm
Supplier Package TO-263
Channel Type N
Maximum Gate Source Voltage ±20 V
Lead Finish Tin Over Nickel
Typical Turn-Off Delay Time 84 ns
Operating Temperature -55 to 175 °C
Product Dimensions 10.31(Max) x 9.45(Max) x 4.57(Max)
Pin Count 3
Maximum Continuous Drain Current 120 A
Mounting Surface Mount
MSL Level 1
Rad Hard No
Typical Turn-On Delay Time 34 ns
Typical Rise Time 58 ns
Max Processing Temp 245
Typical Fall Time 28 ns
Package 3TO-263
Replacement Part Number PART-IPB027N10N3 G
Weight Contact us
Country of Origin -

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